Abstract
Research on Programmable Electromagnetic Surfaces has gained considerable attention as an enabling technology for 6G communications, particularly at millimeter-wave and sub-THz bands. However, RISs face challenges related to the need for high-performance reconfigurable techniques that offer compact size and reduced power consumption at high frequencies. Moreover, the experimental characterization of unit cell performance using a waveguide remains a challenging issue. This paper discusses the design and performance analysis of a 1-bit reconfigurable unit cell at the Dband using non-volatile reconfigurable technology. The efficiency analysis of the unit cell was performed using periodic boundary conditions and waveguide configurations to mitigate simulation risks and validate the proposed design at the unit cell level. All simulation configurations confirmed an operational bandwidth of 25.65 GHz across the 147.8-173.45 GHz range, with a reflection loss of less than 1 dB and a phase difference within 180 degrees +/- 20 degrees.

Abstract
A comparative analysis of Ka and D-band unit cells is presented using a Waveguide Simulator and infinite array models with a Floquet port. Initially, a single-unit cell design is employed with a tapered transition section. Subsequently, a 1 x 2-unit cell is designed and integrated into standard rectangular waveguides WR-34 and WR-7. For the Ka-band, the results obtained from both models exhibit excellent agreement in terms of magnitude and phase. In the D-band, the 1 x 2-unit cell demonstrated low loss for both techniques, and the phase responses were reasonably accurate with differences of less than 40 degrees. At such high frequencies (145-175 GHz), the Waveguide Simulator offers a viable solution for assessing the behavior of the unit cell without the need for a full array.

Abstract
The Sub-THz and millimeter-wave bands have gained popularity, with the expectation that they will host the next generation of wireless communication systems. Furthermore, research on beam-steering characteristics provided by Programmable Electromagnetic Surfaces, such as Reflective Intelligent Surfaces (RISs), has garnered considerable attention as an enabling technology for 6G communications. Due to size limitations, RISs face challenges related to power consumption in the reconfigurable elements and their integration with unit cells operating at high frequencies. This paper discusses the design of a 1-bit reconfigurable unit cell at the D-band using non-volatile technology to minimize static power consumption. Simulation results show that the proposed unit cell performs well with a reflection loss of less than 1.3 dB in both reconfigurable states across a frequency band from 120 to 170 GHz. Moreover, the phase difference between the two states is maintained at 180 degrees +/- 20 degrees, with an operational bandwidth of approximately 16 GHz. The beamforming capabilities, with steering angles from -60 degrees to 60 degrees, of the 12x12 RIS, utilizing the proposed unit cell, have been demonstrated in terms of controlling the main beam radiation precisely to various angles with consistent performance at frequencies of 147GHz,152GHz, and 152.5 GHz.

Abstract
Reconfigurable Intelligent Surfaces (RISs) are in significant focus within 6G research. However, RISs face a power consumption challenge in the reconfigurable elements which may restrict its future scale-up to large areas. We address this issue by proposing a unit cell based on a non-volatile memristor-based switching mechanism. A 1-bit memristor-based reconfigurable RIS unit cell was designed in the Ka-band, and validated using CST and HFSS simulation platforms. The required control circuit to enable the digital control of the memristor has also been proposed. The proposed unit cell achieves losses of less than 1 dB over a frequency band of 25 - 28.3 GHz and a phase difference of 180 degrees +/- 20 degrees at a central frequency of 26.7 GHz, with an operational bandwidth of approximately 1 GHz. Furthermore, an exemplary 16x16 RIS was designed and simulated based on the proposed unit cell to demonstrate its capability to achieve beam steering.

Abstract

This study presents the first application-ready demonstration of radio-frequency (RF) switches based on memristors fabricated through a combination of electrochemical exfoliation and liquid-liquid interfacial assembly (EC-LL). This 2D layer fabrication method yields uniform, low-defect bilayer MoS2 nanosheet networks without relying on high-temperature processes or hazardous gases typical of chemical vapor deposition (CVD), offering a low-cost and environmentally friendly route towards CMOS-compatible integration. Remarkably, the resulting devices exhibit robust unipolar resistive switching which simplifies biasing requirements and reduces power consumption. Reproducibility with retention of 104 sec, and endurance of 100 cycles is reported. RF measurements confirm reliable operation at millimeter wave (mmWave) frequencies across 10–110 GHz, demonstrating low insertion loss (0.42–0.9 dB), isolation >18 dB, and an intrinsic cut-off frequency of ~5.4 THz. Integration into Reconfigurable Intelligent Surface Unit Cells (RIS-UCs) further showcases the technology’s utility in next-generation mmWave communication systems, including 5G/6G and satellite applications. Simulations of a 24×24-element RIS panel confirm high gain (>21.6 dBi) and efficient beam steering (-60º, 60º degrees) over the 26.8–29.1 GHz band, while the ultra-low switching energy (~330 pJ per unit cell) enables zero static power consumption—critical for scalable and sustainable 6G infrastructure. This work establishes a new benchmark by delivering the first solution-processed, application-suitable 2D material in solid-state RF switches combining non-volatility, high-frequency operation, and CMOS integration potential. It marks a significant step toward reconfigurable, energy-efficient wireless communication platforms.