Abstract

Abstract
For the upcoming 6G wireless networks, reconfigurable intelligent surfaces are an essential technology, enabling dynamic beamforming and signal manipulation in both reflective and transmissive modes. It is expected to utilize frequency bands in the millimeter-wave and THz, which presents unique opportunities but also significant challenges. The selection of switching technologies that can support high-frequency operation with minimal loss and high efficiency is particularly complex. In this work, we demonstrate the potential of advanced components such as Schottky diodes, memristor switches, liquid metal-based switches, phase change materials, and RF-SOI technology in RIS designs as an alternative to overcome limitations inherent in traditional technologies in D-band (110-170 GHz).

Abstract
The technology of Reconfigurable Intelligent Surfaces (RISs) is lately being considered as a boosting component for various indoor wireless applications, enabling wave propagation control and coverage extension. However, the incorporation of extremely large RISs, as recently being considered for ultra-high capacity industrial environments at subTHz frequencies, imposes certain challenges for indoor channel characterization. In particular, such RISs contribute additional multipath components and their large sizes with respect to the signal wavelength lead to near-field propagation. To this end, ray tracing approaches become quite cumbersome and need to be rerun for different RIS unit cell designs. In this paper, we present a novel approach for the incorporation of RISs in indoor multipath environments towards their efficient channel characterization. An 100x100 RIS design with 2-bit resolution unit cells realizing a fixed anomalous reflection at 300 GHz is presented, whose radar cross section patterns are obtained via full-wave simulations. It is showcased that the RIS behavior can be conveniently approximated by a three-ray model, which can be efficiently incorporated within available ray tracing tools, and that the far-field approximation is valid for even very small distances from the RIS.

Abstract

Abstract