Abstract

Abstract
Supply current test is well established for digital CMOS circuits and the advantages of improved observability and reliability indication have prompted its use for analogue and mixed signal circuits. A short review of the literature on this subject is given. Fault simulation is used for the investigation of dynamic supply current test of a PLL, confirming existing results from smaller circuits that a combination of supply current and output voltage monitoring leads to higher fault coverage. In the paper, fault coverage is further improved, using crosscorrelation of the supply current and output signals, and the potential for BIST implementation of this technique is demonstrated using low resolution polarised crosscorrelation. Fault simulation is also performed on an analogue multiplier to investigate the effect of process parameter deviations on the supply current. The fault coverage is found to be improved by removing the DC component of the signal. Encouraging results are obtained from the application of supply current test techniques to a commercial mixed signal ASIC currently beyond the capabilities of analogue fault simulation, indicating that efforts at improving fault simulation in this area are worthwhile. The requirements for fault modelling and simulation to support supply current test are discussed and some initial results of accelerating this process using macromodelling are presented.

Abstract
The use of cross-correlation between power supply current and output voltage dynamic responses is presented as a methodology for improved mixed current/voltage testing of analogue and mixed-signal circuits. Results obtained from simulations are presented which show that better fault coverage and a simplification of test circuitry can be obtained, when compared with the results obtained from the direct observation of the individual signals. These advantages are important factors to develop viable new design for testability and built-in self test techniques.

Abstract
We show that incoherently coupled soliton pairs are possible in biased photorefractive crystals, under steady-state conditions. These solitons can propagate in bright-bright, dark-dark, as well as in bright-dark configurations. Such soliton pairs can be established provided that the carrier beams share the same polarization, wavelength, and are mutually incoherent. Relevant examples are provided where the photorefractive crystal is of the strontium barium niobate type. The characteristics and stability properties of these soliton states are also discussed in detail. (C) 1996 American Institute of Physics.

Abstract
We investigate higher-order space charge field effects on the evolution of bright spatial solitons in biased photorefractive crystals under steady-state conditions. Numerical simulations demonstrate that these optical solitons can experience considerable increase in their self-deflection especially in the regime of very high bias field strengths. This process is further studied using perturbation techniques. Our analysis indicates, that for very high bias fields, the self-bending process is further enhanced by a factor that varies cubically with the applied field. Relevant examples are provided.

Abstract