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Publicações

Publicações por Ahmed Hussein

2019

Novel Active Nested Neutral-Point Piloted Nine-level Converter

Autores
Hussein, AS; Ghias, A;

Publicação
2019 IEEE Energy Conversion Congress and Exposition (ECCE)

Abstract

2019

Reliable noise modeling of GaN HEMTs for designing low-noise amplifiers

Autores
Jarndal, A; Hussein, A; Crupi, G; Caddemi, A;

Publicação
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Abstract
AbstractA reliable modeling procedure is developed for extracting an equivalent circuit able to reproduce the small-signal and noise performance of the gallium nitride (GaN) high-electron mobility transistor (HEMT) technology. The main advantages of this model are its simplicity and straightforward extraction based on only pinch-off scattering (S-) parameter measurements. The validity of the achieved model is verified by the good agreement between high-frequency experiments and simulations for three devices with different sizes. The model reliability is further confirmed by the observed good scaling of the extracted parameters. The same model is demonstrated by designing and simulating a broadband low-noise amplifier (LNA) for 5G applications.

2020

Reduced Switch Count Dual-output T-type Multilevel Converter

Autores
Hussein, AS; Ghias, A;

Publicação
IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society

Abstract

2020

On reliable modeling of substrate/buffer loading effects in a gallium nitride high-electron-mobility transistor on silicon substrate

Autores
Jarndal, A; Hussein, AS;

Publicação
Journal of Computational Electronics

Abstract

2021

A Three-level Neutral-Point Clamped Dual-Output Converter

Autores
Hussein, AS; Ghias, A;

Publicação
2021 IEEE Energy Conversion Congress and Exposition (ECCE)

Abstract

2022

Cascaded Multioutput Multilevel Converter: Modulation and Operating Limits

Autores
Hussein, AS; Ghias, AMYM;

Publicação
IEEE Transactions on Industrial Electronics

Abstract

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