Abstract
In this paper a small-signal and noise modeling approach is developed and applied to GaN HEMTs. The main advantage of the proposed method is its simplicity and dependency on only pinch-off S-parameter measurements. The achieved model shows good fitting with microwave experiments performed on nonlinear solid-state devices with different sizes. The model reliability is further confirmed by the observed scaling of the extracted parameters.

Abstract
This paper presents an efficient parameter extraction method applied to GaN high electron mobility transistors. The procedure only relies on S-parameter measurements at cold bias conditions to extract the extrinsic parameters of a 19-element small-signal model. Hybrid technique of particle-swarm-optimization and direct fitting has been developed and implemented. The extraction procedure has been optimized to consider measurements uncertainty and improve the reliability of the extraction. The procedure has been validated by multibias extraction for different device sizes. A very good agreement between simulations and measurements has been obtained.

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